| No. |
Part Name |
Description |
Manufacturer |
| 10261 |
MJE703STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 10262 |
MJE800 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 10263 |
MJE800 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 10264 |
MJE800STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 10265 |
MJE801 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 10266 |
MJE801 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 10267 |
MJE801STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 10268 |
MJE802 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 10269 |
MJE802 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 10270 |
MJE802STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 10271 |
MJE803 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 10272 |
MJE803 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 10273 |
MJE803STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 10274 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 10275 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 10276 |
MM3000 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V |
Motorola |
| 10277 |
MM3001 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V |
Motorola |
| 10278 |
MM3002 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V |
Motorola |
| 10279 |
MM3003 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V |
Motorola |
| 10280 |
MMBA811C6 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 10281 |
MMBA812M6 |
PNP EPITAXIAL PLANAR TRANSISTOR(General Purpose Transistor) |
Samsung Electronic |
| 10282 |
MMBC1622D8 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10283 |
MMBC1623L6 |
50 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10284 |
MMBD4148 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 10285 |
MMBD914 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 10286 |
MMBT2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10287 |
MMBT2222AT |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 10288 |
MMBT2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 10289 |
MMBT3904SL |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 10290 |
MMBT3904T |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| | | |
