| No. |
Part Name |
Description |
Manufacturer |
| 10291 |
VPS10 |
HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS |
SANYO |
| 10292 |
VSC8122-FECQP |
Multi-rate SONET/SDH FEC clock and data recovery IC |
Vitesse Semiconductor Corporation |
| 10293 |
VSC9187 |
VSC9187 Bromley - 3045 x 3045 VT1.5 TSI Switch Fabric |
Vitesse Semiconductor Corporation |
| 10294 |
VSC9210 |
2.5Gb/s SONET/SDH FEC encoder and decoder. 3.3V power supply |
Vitesse Semiconductor Corporation |
| 10295 |
VUC25-12GO2 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes |
IXYS |
| 10296 |
VUC25-14GO2 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes |
IXYS |
| 10297 |
VUC25-16GO2 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes |
IXYS |
| 10298 |
VUC36-12GO2 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes |
IXYS |
| 10299 |
VUC36-14GO2 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes |
IXYS |
| 10300 |
VUC36-16GO2 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes |
IXYS |
| 10301 |
VUE130-12NO7 |
Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) |
IXYS Corporation |
| 10302 |
W39V040FAP |
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE |
Winbond Electronics |
| 10303 |
W39V040FAQ |
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE |
Winbond Electronics |
| 10304 |
W39V040FAT |
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE |
Winbond Electronics |
| 10305 |
W49V002 |
256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
Winbond Electronics |
| 10306 |
W49V002FAP |
256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
Winbond Electronics |
| 10307 |
W49V002FAQ |
256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
Winbond Electronics |
| 10308 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10309 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10310 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10311 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10312 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10313 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10314 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10315 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10316 |
W523AXXX |
HIGH FIDELITY POWER SPEECH |
Winbond Electronics |
| 10317 |
W5830 |
HIGH FIDELITY Power Speech |
Winbond Electronics |
| 10318 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10319 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10320 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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