| No. |
Part Name |
Description |
Manufacturer |
| 10321 |
MP4104 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10322 |
MP4301 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10323 |
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10324 |
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10325 |
MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10326 |
MP4501 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10327 |
MP4502 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10328 |
MP4503 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10329 |
MP4504 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10330 |
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10331 |
MP6301 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor |
TOSHIBA |
| 10332 |
MP6901 |
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10333 |
MPS-A13 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
| 10334 |
MPS-A14 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
| 10335 |
MPS-A65 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
| 10336 |
MPS-A66 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
| 10337 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
| 10338 |
MPS2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10339 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
| 10340 |
MPS2222A |
75 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10341 |
MPS2711 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10342 |
MPS2711 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
| 10343 |
MPS2712 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10344 |
MPS2712 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
| 10345 |
MPS2716 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10346 |
MPS2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 10347 |
MPS2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 10348 |
MPS2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 10349 |
MPS2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 10350 |
MPS2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
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