| No. |
Part Name |
Description |
Manufacturer |
| 10411 |
MPS6566 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10412 |
MPS6573 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10413 |
MPS6574 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10414 |
MPS6575 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10415 |
MPS6576 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10416 |
MPS6601 |
25 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10417 |
MPS6602 |
30 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10418 |
MPS6651 |
25 V, 1000 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 10419 |
MPS8097 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 10420 |
MPS8097 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10421 |
MPS8098 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10422 |
MPS8099 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10423 |
MPS8598 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 10424 |
MPS8599 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 10425 |
MPSA13 |
SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
Micro Electronics |
| 10426 |
MPSA14 |
SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
Micro Electronics |
| 10427 |
MPSA65 |
SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
Micro Electronics |
| 10428 |
MPSA66 |
SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
Micro Electronics |
| 10429 |
MPSA92M |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
DC Components |
| 10430 |
MSD6100 |
Silicon epitaxial dual switching diode |
Motorola |
| 10431 |
MSD6101 |
Silicon epitaxial dual discriminator diode designed for use in FM discriminator applications |
Motorola |
| 10432 |
MSD6102 |
Silicon epitaxial dual diode designed for use as a horizontal phase detector for television receivers |
Motorola |
| 10433 |
MSD6150 |
Silicon epitaxial dual diode designed for consumer applications |
Motorola |
| 10434 |
MSD7000 |
Silicon Epitaxial Dual series diode |
Motorola |
| 10435 |
MT3S03AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 10436 |
MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 10437 |
MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 10438 |
MT3S04AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 10439 |
MT3S04AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 10440 |
MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
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