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Datasheets for 50

Datasheets found :: 25662
Page: | 345 | 346 | 347 | 348 | 349 | 350 | 351 | 352 | 353 |
No. Part Name Description Manufacturer
10441 MAX6736XKYDD3-T Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10442 MAX6736XKYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10443 MAX6736XKYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10444 MAX6736XKYHD3-T Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10445 MAX6736XKYVD3-T Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10446 MAX6736XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10447 MAX6736XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10448 MAX6736XKZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10449 MAX6736XKZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10450 MAX6737XKLTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10451 MAX6737XKMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10452 MAX6737XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10453 MAX6737XKRDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10454 MAX6737XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10455 MAX6737XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10456 MAX6737XKRHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10457 MAX6737XKRVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10458 MAX6737XKRYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10459 MAX6737XKSDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10460 MAX6737XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10461 MAX6737XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10462 MAX6737XKSHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10463 MAX6737XKSVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10464 MAX6737XKSYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10465 MAX6737XKTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10466 MAX6737XKTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10467 MAX6737XKTID3-T Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10468 MAX6737XKTWD3-T Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10469 MAX6737XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
10470 MAX6737XKVDD3-T Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 25662
Page: | 345 | 346 | 347 | 348 | 349 | 350 | 351 | 352 | 353 |



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