| No. |
Part Name |
Description |
Manufacturer |
| 10501 |
Q62702-D1041 |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
Siemens |
| 10502 |
Q62702-D1051 |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
Siemens |
| 10503 |
Q62702-D1056 |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
Siemens |
| 10504 |
Q62702-D1061 |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
Siemens |
| 10505 |
Q62702-D1066 |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
Siemens |
| 10506 |
Q62702-D1258 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 10507 |
Q62702-D1259 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 10508 |
Q62702-D1267 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 10509 |
Q62702-D1268 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 10510 |
Q62702-D1275 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 10511 |
Q62702-D1276 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 10512 |
Q62702-D1284 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 10513 |
Q62702-D1285 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 10514 |
Q62702-F1590 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
| 10515 |
Q62702-P3001 |
1300 nm Laser in Receptacle Package, Medium Power |
Siemens |
| 10516 |
Q62702-P3050 |
1300 nm Laser in Receptacle Package, Medium Power |
Siemens |
| 10517 |
Q62702-P3056 |
1300 nm Laser in Receptacle Package, Medium Power |
Siemens |
| 10518 |
Q62702-P3061 |
1300 nm Laser in Receptacle Package, Medium Power |
Siemens |
| 10519 |
Q62702A1178 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
| 10520 |
Q62702A1180 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
| 10521 |
Q62702D1345 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
| 10522 |
Q62702D1346 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
| 10523 |
QM100HY-2 |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10524 |
QM100HY-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10525 |
QM10HA-HB |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10526 |
QM15 |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10527 |
QM15DX-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10528 |
QM15DX-H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10529 |
QM15HA-H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10530 |
QM15KD-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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