| No. |
Part Name |
Description |
Manufacturer |
| 10501 |
OC604 spez. |
Germanium PNP junction transistor, red point |
TELEFUNKEN |
| 10502 |
OC612 |
Germanium PNP junction HF transistor |
TELEFUNKEN |
| 10503 |
OC613 |
Germanium PNP junction HF transistor |
TELEFUNKEN |
| 10504 |
OC614 |
Germanium PNP junction transistor, RF and IF stages |
TELEFUNKEN |
| 10505 |
OC615 |
Germanium PNP junction transistor, USW stages |
TELEFUNKEN |
| 10506 |
OD603 |
Germanium PNP junction transistor, power output stages |
TELEFUNKEN |
| 10507 |
OD603/50 |
Germanium PNP junction transistor, power transistor with high blocking voltage |
TELEFUNKEN |
| 10508 |
ON21 |
ON21 is an OR / NAND circuit providing the logical function Q = NOT ( (A+B) C ) |
Austria Mikro Systems |
| 10509 |
ON22 |
ON22 is an OR / NAND circuit providing the logical function Q = NOT [ (A+B).(C+D) ]. |
Austria Mikro Systems |
| 10510 |
ON222 |
ON222 is an OR / NAND circuit providing the logical function Q = NOT (A+B).(C+D).(E+F) |
Austria Mikro Systems |
| 10511 |
ON322 |
ON322 is an OR / NAND circuit providing the logical function Q = NOT [ (A+B+C).(D+E).(F+G) ] |
Austria Mikro Systems |
| 10512 |
OP900SL |
PN junction silicon photodiode |
Optek Technology |
| 10513 |
OS14 |
Germanium PNP alloy junction photo transistor |
TOSHIBA |
| 10514 |
OS18 |
Silicon NPN diffused junction photo transistor |
TOSHIBA |
| 10515 |
P1086 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 10516 |
P1087 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 10517 |
P4KE |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 10518 |
P4KE |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 10519 |
P4KE10 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 10520 |
P4KE10 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 10521 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10522 |
P4KE100 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 10523 |
P4KE100 |
100 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 10524 |
P4KE100 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 10525 |
P4KE100A |
85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10526 |
P4KE100A |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 10527 |
P4KE100A |
100 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 10528 |
P4KE100A |
100 V, 1 mA, glass passivated junction transient voltage suppressor |
TRSYS |
| 10529 |
P4KE100C |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 10530 |
P4KE100C |
100 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
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