| No. |
Part Name |
Description |
Manufacturer |
| 1051 |
GDK5 |
Germanium layer diode low performance |
Felvezeto Katalogus 1966 |
| 1052 |
GDK6 |
Germanium layer diode low performance |
Felvezeto Katalogus 1966 |
| 1053 |
GDK7 |
Germanium layer diode low performance |
Felvezeto Katalogus 1966 |
| 1054 |
GEN51 |
Germanium layer diode medium performance |
Felvezeto Katalogus 1966 |
| 1055 |
GEN52 |
Germanium layer diode medium performance |
Felvezeto Katalogus 1966 |
| 1056 |
GEN53 |
Germanium layer diode medium performance |
Felvezeto Katalogus 1966 |
| 1057 |
GEN54 |
Germanium layer diode medium performance |
Felvezeto Katalogus 1966 |
| 1058 |
GEN55 |
Germanium layer diode medium performance |
Felvezeto Katalogus 1966 |
| 1059 |
GLOSSARY |
GLOSSARY from Silicon Systems Communication Product DATA BOOK 1994 |
Silicon Systems |
| 1060 |
HFCN-1600 |
Ceramic High Pass Filter 1950 to 5000 MHz |
Mini-Circuits |
| 1061 |
HFCN-1600D |
Ceramic High Pass Filter 1950 to 5000 MHz |
Mini-Circuits |
| 1062 |
HFTC-16 |
Ceramic High Pass Filter 1900 to 2700 MHz |
Mini-Circuits |
| 1063 |
HMC448 |
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT |
Hittite Microwave Corporation |
| 1064 |
IRF6655TR1PBF |
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes. |
International Rectifier |
| 1065 |
IRF6665TR1 |
Leaded Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes |
International Rectifier |
| 1066 |
IRF6665TR1PBF |
A Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes. |
International Rectifier |
| 1067 |
IRF6665TRPBF |
A Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes. |
International Rectifier |
| 1068 |
IRF6711S |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 1069 |
IRF6711STR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 1070 |
IRF6711STRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 1071 |
IRF6785 |
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 1072 |
IRF6785MTRPBF |
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 1073 |
IRF6811S |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 1074 |
IRF6811STR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 1075 |
IRF6811STRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 1076 |
IRF7946 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 198 amperes optimized with low on resistance. |
International Rectifier |
| 1077 |
IRF7946TRPBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 198 amperes optimized with low on resistance. |
International Rectifier |
| 1078 |
ISL5120 |
Analog Switch, SPST, Dual, NOpen, Ron = 32 @ 3.3V, 19 @ 5V, 11 @ 12V, Single Supply, +2.7V to +12V |
Intersil |
| 1079 |
ISL5121 |
Analog Switch, SPST, Dual, NClosed, Ron = 32 @ 3.3V, 19 @ 5V, 11 @ 12V, Single Supply, +2.7V to +12V |
Intersil |
| 1080 |
ISL5122 |
Analog Switch, SPST, Dual, NClosed/NClosed, Ron = 32 @ 3.3V, 19 @ 5V, 11 @ 12V, Single Supply, +2.7V to +12V |
Intersil |
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