| No. |
Part Name |
Description |
Manufacturer |
| 1051 |
AZ100ELT20D |
3.0 V-5.5 V, CMOS/TTL to differential PECL translator |
Arizona Microtek |
| 1052 |
AZ100ELT20DR1 |
3.0 V-5.5 V, CMOS/TTL to differential PECL translator |
Arizona Microtek |
| 1053 |
AZ100ELT20DR2 |
3.0 V-5.5 V, CMOS/TTL to differential PECL translator |
Arizona Microtek |
| 1054 |
BAS20DW |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 1055 |
BAS20DW-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
| 1056 |
BAT14-020D |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 1057 |
BAT15-020D |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 1058 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 1059 |
BGA420 |
Silicon MMICs - 20dB LNA, 0...3GHz, 50Ohm, SOT343 |
Infineon |
| 1060 |
BQ24020DRC |
SINGLE-CHIP/LI-ION AND LI-POL CHARGER IC WITH AUTONOMOUS USB-PORT AND AC-ADAPTER SUPPLY MANAGEMENT |
Texas Instruments |
| 1061 |
BQ24020DRCR |
bqTINY-II Single-Chip 1-Cell Li-Ion Charger w/USB/AC Supply Mgmt in 3x3mm2 QFN w/Enable, Temp Sense |
Texas Instruments |
| 1062 |
BQ24020DRCRG4 |
bqTINY-II Dual Input USB/AC Adpater 1-Cell Li-Ion Charger w/Charge Enable & Temp Sense in QFN-10 10-VSON -40 to 125 |
Texas Instruments |
| 1063 |
BS616LV2020DC |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
Brilliance Semiconductor |
| 1064 |
BS616LV2020DI |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
Brilliance Semiconductor |
| 1065 |
BS616LV4020DC |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
| 1066 |
BS616LV4020DI |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
| 1067 |
BS616UV4020DC |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
| 1068 |
BS616UV4020DI |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
| 1069 |
BSM100GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 1070 |
BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1071 |
BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1072 |
BSM100GD120DLC |
IGBT-Module |
Eupec GmbH |
| 1073 |
BSM100GD120DN2 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
| 1074 |
BSM100GT120DN2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1075 |
BSM120D12P2C005 |
SiC Power Module |
ROHM |
| 1076 |
BSM150GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 1077 |
BSM150GAL120DN2E3166 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 1078 |
BSM150GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1079 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 1080 |
BSM150GT120DN2 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
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