| No. |
Part Name |
Description |
Manufacturer |
| 1051 |
Q62702-A1189 |
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply |
Siemens |
| 1052 |
Q62702-F1296 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1053 |
Q62702-F1298 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1054 |
Q62702-F1377 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1055 |
Q62702-F1378 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1056 |
Q62702-F1490 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1057 |
Q62702-F1494 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems |
Siemens |
| 1058 |
Q62702-F1500 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1059 |
Q62702-F1504 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1060 |
Q62702-F1531 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1061 |
Q62702-G0071 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 1062 |
Q62702-G44 |
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) |
Siemens |
| 1063 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1064 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1065 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 1066 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1067 |
Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
Siemens |
| 1068 |
Q62702G-39 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
Siemens |
| 1069 |
RA07H4047M |
400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1070 |
RA07H4047M-01 |
400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1071 |
RA07H4047M-E01 |
400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1072 |
RA08H1317 |
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1073 |
RA08H1317M |
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1074 |
RA08H1317M-01 |
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1075 |
RA08H1317M-E01 |
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1076 |
RA13H4047M |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1077 |
RA13H4047M-01 |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1078 |
RA13H4047M-E01 |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1079 |
RA20H8087M |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 1080 |
RA20H8087M-01 |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
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