No. |
Part Name |
Description |
Manufacturer |
1051 |
ASM3X2105AFT |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
1052 |
ASM3X2105AFTR |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
1053 |
AT91RM9200 |
The AT91RM9200 features a 200 MIPS ARM920T processor with 16K-byte instruction and 16K-byte data cache memories, 16K bytes of SRAM, 128K bytes of ROM, External Bus Interface featuring SDRAM, Burst Flash and Static Memory Controllers, USB D |
Atmel |
1054 |
ATPH33MAHA |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TPH |
Panasonic |
1055 |
B120_B |
20V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1056 |
B130_B |
30V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1057 |
B140_B |
40V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1058 |
B150_B |
50V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1059 |
B160_B |
60V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1060 |
B220_A |
20V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1061 |
B230_A |
30V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1062 |
B240_A |
40V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1063 |
B250_A |
50V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1064 |
B260_A |
60V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1065 |
B320_A_B |
20V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1066 |
B330_A_B |
30V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1067 |
B340_A_B |
40V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1068 |
B350_A_B |
50V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1069 |
B360_A_B |
60V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
1070 |
BF |
Precision Rotative Transducers, Conductive Plastic, Bushing Mounting, Size 08 to 30, Good Repeatability, Long Life, Essentially Infinite Resolution, Up to 6 Electrical Functions on the Same Shaft |
Vishay |
1071 |
BR261 |
BelaSigna® R261 Advanced Noise Reduction Solution for Voice Capture Devices |
ON Semiconductor |
1072 |
BR262 |
Wideband Voice Capture and Noise Reduction SoC |
ON Semiconductor |
1073 |
BTS630 |
PWM Power Unit (The device allows continuous power control for lamps,LEDs or inductive loads.) |
Siemens |
1074 |
BTS730 |
PWM Power Unit (The device allows continuous power control for lamps,LEDs or inductive loads.) |
Siemens |
1075 |
CAB450M12XM3 |
1200 V, 450 A Silicon Carbide Conduction-Loss Optimized XM3 Half-Bridge Module |
Wolfspeed |
1076 |
CM-99115 |
Professional to HiFi Level Reduction Transformer |
etc |
1077 |
CMPD5001 |
HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE |
Central Semiconductor |
1078 |
CMPD5001S |
HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE |
Central Semiconductor |
1079 |
CP |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Fusible Styles Available, Meets or Exceeds Requirements of EIA Standard RS-344, High Thermal Conductivity and Humidity Resistance |
Vishay |
1080 |
CP |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Fusible Styles Available, Meets or Exceeds Requirements of EIA Standard RS-344, High Thermal Conductivity and Humidity Resistance |
Vishay |
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