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Datasheets for V.

Datasheets found :: 9262
Page: | 32 | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 |
No. Part Name Description Manufacturer
1051 2N6428A Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1052 2N6428A Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1053 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1054 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1055 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1056 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1057 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1058 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1059 2N6518 High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
1060 2N6518 High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
1061 2N6519 High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
1062 2N6519 High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
1063 2N6520 High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
1064 2N6520 High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
1065 2N6530 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
1066 2N6531 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. General Electric Solid State
1067 2N6532 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
1068 2N6533 8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. General Electric Solid State
1069 2N6576 15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
1070 2N6577 15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
1071 2N6578 15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
1072 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
1073 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
1074 2N6650 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
1075 2N6666 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
1076 2N6667 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
1077 2N6668 10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
1078 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
1079 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
1080 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State


Datasheets found :: 9262
Page: | 32 | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 |



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