No. |
Part Name |
Description |
Manufacturer |
10531 |
MAX6737XKSVD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10532 |
MAX6737XKSVD3-T |
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10533 |
MAX6737XKSYD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10534 |
MAX6737XKSYD3-T |
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10535 |
MAX6737XKTED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10536 |
MAX6737XKTGD3 |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10537 |
MAX6737XKTGD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10538 |
MAX6737XKTGD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10539 |
MAX6737XKTGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10540 |
MAX6737XKTGD3-TG05 |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10541 |
MAX6737XKTID3-T |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10542 |
MAX6737XKTWD3-T |
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10543 |
MAX6737XKTZD3 |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10544 |
MAX6737XKTZD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10545 |
MAX6737XKTZD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10546 |
MAX6737XKTZD3-T |
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10547 |
MAX6737XKTZD3-TG05 |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10548 |
MAX6737XKVDD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10549 |
MAX6737XKVDD3-T |
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10550 |
MAX6737XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10551 |
MAX6737XKVHD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10552 |
MAX6737XKVHD3-T |
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10553 |
MAX6737XKVRD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10554 |
MAX6737XKVRD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10555 |
MAX6737XKVRD3-T |
Vcc1: 1.575 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10556 |
MAX6737XKWED3-T |
Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10557 |
MAX6737XKWGD3-T |
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10558 |
MAX6737XKWID3-T |
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10559 |
MAX6737XKWTD3-T |
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
10560 |
MAX6737XKYDD3-T |
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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