| No. |
Part Name |
Description |
Manufacturer |
| 10561 |
BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 10562 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 10563 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 10564 |
BUL642D2 |
High Speed, High Gain NPN Transistor |
ON Semiconductor |
| 10565 |
BY328 |
Diode Switching 1.5KV 2-Pin GALF |
New Jersey Semiconductor |
| 10566 |
BYD73A |
Diode Switching 50V 1A 2-Pin GALF |
New Jersey Semiconductor |
| 10567 |
BYV10-30 |
Diode Schottky 30V 1A 2-Pin GALF |
New Jersey Semiconductor |
| 10568 |
BYW95A |
Diode Switching 200V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 10569 |
BYW95B |
Diode Switching 400V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 10570 |
BYW95C |
Diode Switching 600V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 10571 |
BYW95D |
Diode Switching 400V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 10572 |
BYW95E |
Diode Switching 400V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 10573 |
C106 |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 10574 |
C106-D |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
ON Semiconductor |
| 10575 |
C106B |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 10576 |
C106D |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 10577 |
C106D1 |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 10578 |
C106M |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 10579 |
C106M1 |
Sensitive Gate Silicon Controlled Rectifier |
ON Semiconductor |
| 10580 |
C62702-C747 |
NPN Silicon AF Transistor (High current gain High collector current) |
Siemens |
| 10581 |
C62702-C748 |
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 10582 |
C62702-C853 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| 10583 |
C62702-C854 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| 10584 |
C62702-C855 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| 10585 |
C62702-C941 |
PNP Silicon Darlington Transistors (High current gain High collector current) |
Siemens |
| 10586 |
C62702-C942 |
PNP Silicon Darlington Transistors (High current gain High collector current) |
Siemens |
| 10587 |
C62702-C943 |
PNP Silicon Darlington Transistors (High current gain High collector current) |
Siemens |
| 10588 |
CA04-41GWA |
The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. |
Kingbright Electronic |
| 10589 |
CA0741CE |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications |
Intersil |
| 10590 |
CA0741CT |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications |
Intersil |
| | | |
