| No. |
Part Name |
Description |
Manufacturer |
| 10561 |
F94 |
Shape and dimensions SITELESC package |
SESCOSEM |
| 10562 |
F95 |
Shape and dimensions SITELESC package |
SESCOSEM |
| 10563 |
F9M |
Shape and dimensions SITELESC package |
SESCOSEM |
| 10564 |
FA38SA50LC |
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package |
International Rectifier |
| 10565 |
FA57SA50LC |
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package |
International Rectifier |
| 10566 |
FAN5350 |
3MHz 600mA DC/DC Buck Converter in WLCSP and MLP package |
Fairchild Semiconductor |
| 10567 |
FASTCARD 2 |
FDDI PC/AT-Based SUPERNET 2 Technology Card (FASTcard), Dual Attachment Concentrator Board Set and Software Package |
Advanced Micro Devices |
| 10568 |
FB180SA10 |
100V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package |
International Rectifier |
| 10569 |
FC64 |
64-Pin Low Profile Quad Flat Package, LQFP |
Pericom Technology |
| 10570 |
FC64 |
64-Pin Low Profile Quad Flat Package, LQFP |
Pericom Technology |
| 10571 |
FCD4B14 |
500 dpi, 0.4mm x 14 mm Digital Fingerprint Linear Sensor, 2240 Pixels (8 x 280) Image Array, Digital Output (On-chip) Package. |
Atmel |
| 10572 |
FCRN303 |
0805 PRECISION THIN FILM RESISTOR CSP (CHIP SCALE PACKAGE) |
California Micro Devices Corp |
| 10573 |
FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 10574 |
FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 10575 |
FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 10576 |
FD1500AU-240 |
Thyristor for high voltage, high power, general use, dynamic gate, press pack type |
Mitsubishi Electric Corporation |
| 10577 |
FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 10578 |
FD1500BV-90DA |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 10579 |
FD2000BV-90DA |
Gate turn-off thyristor for high power inverter use press pack type |
Mitsubishi Electric Corporation |
| 10580 |
FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 10581 |
FD2000DU-120 |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Powerex Power Semiconductors |
| 10582 |
FD500JV-90DA |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 10583 |
FDB035AN06A0_NL |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package |
Fairchild Semiconductor |
| 10584 |
FDB060AN08A0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package |
Fairchild Semiconductor |
| 10585 |
FDB060AN08A0_NL |
Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-263/D2PAK Package |
Fairchild Semiconductor |
| 10586 |
FDB14AN06LA0 |
N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package |
Fairchild Semiconductor |
| 10587 |
FDC10 |
10 watts of output power from a 2 x 1 x 0.4 inch package |
Power Mate Technology |
| 10588 |
FDC10-12D05 |
10 watts of output power from a 2 x 1 x 0.4 inch package |
Power Mate Technology |
| 10589 |
FDC10-12D12 |
10 watts of output power from a 2 x 1 x 0.4 inch package |
Power Mate Technology |
| 10590 |
FDC10-12D15 |
10 watts of output power from a 2 x 1 x 0.4 inch package |
Power Mate Technology |
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