| No. |
Part Name |
Description |
Manufacturer |
| 10651 |
BF241 |
Silicon high-frequency NPN transistor, plastic case |
IPRS Baneasa |
| 10652 |
BF245 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 10653 |
BF245A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 10654 |
BF245B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 10655 |
BF245C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 10656 |
BF247 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 10657 |
BF247A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 10658 |
BF247B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 10659 |
BF247C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 10660 |
BF254 |
Silicon high-frequency NPN transistor, plastic case |
IPRS Baneasa |
| 10661 |
BF255 |
Silicon high-frequency NPN transistor, plastic case |
IPRS Baneasa |
| 10662 |
BF257 |
1.000W General Purpose NPN Metal Can Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 10663 |
BF258 |
1.000W General Purpose NPN Metal Can Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 10664 |
BF259 |
1.000W General Purpose NPN Metal Can Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 10665 |
BF272A |
Silicon PNP high-frequency transistor, metal case |
IPRS Baneasa |
| 10666 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 10667 |
BF272B |
Silicon PNP high-frequency transistor, metal case |
IPRS Baneasa |
| 10668 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 10669 |
BF316A |
Silicon PNP high-frequency transistor, metal case |
IPRS Baneasa |
| 10670 |
BF450 |
Silicon high-frequency PNP transistor, plastic case |
IPRS Baneasa |
| 10671 |
BF451 |
Silicon high-frequency PNP transistor, plastic case |
IPRS Baneasa |
| 10672 |
BF506 |
Silicon high-frequency PNP transistor, plastic case |
IPRS Baneasa |
| 10673 |
BF509 |
Silicon high-frequency PNP transistor, plastic case |
IPRS Baneasa |
| 10674 |
BF599 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) |
Siemens |
| 10675 |
BF840 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 10676 |
BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 10677 |
BF914 |
Silicon high-frequency PNP transistor, plastic case |
IPRS Baneasa |
| 10678 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
| 10679 |
BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) |
Siemens |
| 10680 |
BF994S |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
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