No. |
Part Name |
Description |
Manufacturer |
10651 |
MGCM02KG |
TDMA/AMPS IF and Baseband Interface |
Zarlink Semiconductor |
10652 |
MH8841AE |
6V; 10mA; calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
10653 |
MH8841AN |
6V; 10mA; calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
10654 |
MH8841AS |
6V; 10mA; calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
10655 |
MH8843AE |
Calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
10656 |
MH8843AS |
Calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
10657 |
MIC5306 |
150mA Micropower Cap Baseband LDO |
Micrel Semiconductor |
10658 |
MIC5306-1.5YD5 |
150mA Micropower Cap Baseband LDO |
Micrel Semiconductor |
10659 |
MIC5306-2.8YD5 |
150mA Micropower Cap Baseband LDO |
Micrel Semiconductor |
10660 |
MJ1000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
10661 |
MJ10004 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
Boca Semiconductor Corporation |
10662 |
MJ10004 |
20A NPN silicon power darlington transistor with base-emitter speedup diode 175W 350V SWITCHMODE SERIES |
Motorola |
10663 |
MJ10005 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
Boca Semiconductor Corporation |
10664 |
MJ10005-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
ON Semiconductor |
10665 |
MJ10006 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE |
Boca Semiconductor Corporation |
10666 |
MJ10006 |
10A NPN silicon power darlington transistor with base-emitter speedup diode 150W 350V SWITCHMODE SERIES |
Motorola |
10667 |
MJ10007 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE |
Boca Semiconductor Corporation |
10668 |
MJ10007-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode |
ON Semiconductor |
10669 |
MJ10008 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
Boca Semiconductor Corporation |
10670 |
MJ10008 |
20A NPN silicon power darlington transistor with base-emitter speedup diode 175W 450V SWITCHMODE SERIES |
Motorola |
10671 |
MJ10009 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
Boca Semiconductor Corporation |
10672 |
MJ10009-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
ON Semiconductor |
10673 |
MJ1001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
10674 |
MJ10015-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
ON Semiconductor |
10675 |
MJ10020-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
ON Semiconductor |
10676 |
MJ10023-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
ON Semiconductor |
10677 |
MJ15003 |
Silicon N-P-N epitaxial-base high power transistor. 140V, 250W. |
General Electric Solid State |
10678 |
MJ15004 |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. |
General Electric Solid State |
10679 |
MJ15022 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
10680 |
MJ15024 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
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