No. |
Part Name |
Description |
Manufacturer |
10711 |
TC55WD1636FF-150 |
524,288-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10712 |
TC55WD1636FF-167 |
524,288-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10713 |
TC55WD818FF-133 |
524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10714 |
TC55WD818FF-150 |
524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10715 |
TC55WD818FF-167 |
524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10716 |
TC55WD836FF-133 |
262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10717 |
TC55WD836FF-150 |
262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10718 |
TC55WD836FF-167 |
262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10719 |
TC55WDM518AFFN15 |
36M 2.5V Pipelined NtRAM TM 2M Word by 18Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10720 |
TC55WDM518AFFN16 |
36M 2.5V Pipelined NtRAM TM 2M Word by 18Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10721 |
TC55WDM518AFFN20 |
36M 2.5V Pipelined NtRAM TM 2M Word by 18Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10722 |
TC55WDM518AFFN22 |
36M 2.5V Pipelined NtRAM TM 2M Word by 18Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10723 |
TC55WDM536AFFN15 |
36M 2.5V Pipelined NtRAM TM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10724 |
TC55WDM536AFFN16 |
36M 2.5V Pipelined NtRAM TM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10725 |
TC55WDM536AFFN20 |
36M 2.5V Pipelined NtRAM TM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10726 |
TC55WDM536AFFN22 |
36M 2.5V Pipelined NtRAM TM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
10727 |
TC55YEM216ABXN-55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM |
TOSHIBA |
10728 |
TC55YEM216ABXN-70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM |
TOSHIBA |
10729 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
10730 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
10731 |
TC581282A |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
10732 |
TC581282A |
128-MBIT (16M X 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
10733 |
TC581282AXB |
128-MBIT (16M � 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
10734 |
TC58128AFT |
128-MBIT (16M x 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
10735 |
TC5816BDC |
16 mbit (2M x 8 bits) CMOS nand flash EEPROM |
TOSHIBA |
10736 |
TC5816BFT |
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM |
TOSHIBA |
10737 |
TC582562AXB |
256-MBIT (32M x 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
10738 |
TC58256AFT |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM |
TOSHIBA |
10739 |
TC58256DC |
SmartMediaTM |
TOSHIBA |
10740 |
TC5832DC |
32 MBIT (4M x 8BIT) CMOS NAND E2PROM |
TOSHIBA |
| | | |