| No. |
Part Name |
Description |
Manufacturer |
| 10771 |
1N5380B |
Diode Zener Single 120V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 10772 |
1N5380B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 120V, Izt =10mA |
Panjit International Inc |
| 10773 |
1N5380B |
5W SILICON ZENER DIODES |
ST Microelectronics |
| 10774 |
1N5380B |
120 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 10775 |
1N5380B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 10776 |
1N5380C |
Diode Zener Single 120V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 10777 |
1N5380D |
Diode Zener Single 120V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 10778 |
1N5381 |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 10779 |
1N5381 |
Diode Zener Single 130V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 10780 |
1N5381A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 10781 |
1N5381A |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 10782 |
1N5381A |
Diode Zener Single 130V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 10783 |
1N5381B |
5 Watt Surmetic 40 Silicon Zener Diodes |
Boca Semiconductor Corporation |
| 10784 |
1N5381B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 10785 |
1N5381B |
5W ZENER DIODE |
Diodes |
| 10786 |
1N5381B |
130 V, 10 mA, 5 W glass passivated zener diode |
Fagor |
| 10787 |
1N5381B |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 10788 |
1N5381B |
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS |
Motorola |
| 10789 |
1N5381B |
500 mW DO-35 Glass Zener Voltage Regulator Diodes |
Motorola |
| 10790 |
1N5381B |
Diode Zener Single 130V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 10791 |
1N5381B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 10792 |
1N5381B |
5W SILICON ZENER DIODES |
ST Microelectronics |
| 10793 |
1N5381B |
130 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 10794 |
1N5381B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 10795 |
1N5381C |
Diode Zener Single 130V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 10796 |
1N5381D |
Diode Zener Single 130V 1% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 10797 |
1N5382 |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 10798 |
1N5382 |
Diode Zener Single 140V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 10799 |
1N5382A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 10800 |
1N5382A |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
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