| No. |
Part Name |
Description |
Manufacturer |
| 10801 |
BFQ73 |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) |
Siemens |
| 10802 |
BFQ73S |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) |
Siemens |
| 10803 |
BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) |
Siemens |
| 10804 |
BFQ81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) |
Siemens |
| 10805 |
BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
Siemens |
| 10806 |
BFR194 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 10807 |
BFR34A |
NPN transistor for low noise RF amplifier applications |
Siemens |
| 10808 |
BFR35A |
NPN transistor for low noise RF amplifiers and fast switching applications, marking GB |
Siemens |
| 10809 |
BFR35A |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 10810 |
BFR35AR |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 10811 |
BFR36 |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 10812 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 10813 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 10814 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 10815 |
BFR96S |
NPN silicon planar epitaxial transistor, primarily intended for MATV applications |
Philips |
| 10816 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 10817 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 10818 |
BFS55 |
NPN transistor for RF applications up to the GHz range |
Siemens |
| 10819 |
BFS62 |
Silicon NON epitaxial planar transistor for general applications up to VHF range |
AEG-TELEFUNKEN |
| 10820 |
BFS69 |
Silicon PNP epitaxial planar transistor for use in AF and RF applications in hybrid circuits |
AEG-TELEFUNKEN |
| 10821 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 10822 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 10823 |
BFW46 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
| 10824 |
BFW47 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 10825 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 10826 |
BFW93 |
Silicon planar epitaxial NPN transistor, intended for use in VHF - UHF applications, primarily wideband aerial amplifiers 40-800MHz |
Philips |
| 10827 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
| 10828 |
BFX34 |
Planar transistor for switching applications |
SGS-ATES |
| 10829 |
BFX84 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 10830 |
BFX85 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
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