| No. |
Part Name |
Description |
Manufacturer |
| 10801 |
Q62702-F935 |
NPN SILICON RF TRANSISTOR (For linear broadband amplifier applications up to 500 MHz SAW filter driver in TV tuners) |
Siemens |
| 10802 |
Q62702-F936 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
| 10803 |
Q62702-F938 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
| 10804 |
Q62702-F940 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 10805 |
Q62702-F944 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 10806 |
Q62702-F976 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 10807 |
Q62702-F977 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 10808 |
Q62702-F979 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) |
Siemens |
| 10809 |
Q62702-F982 |
PNP Silicon RF Transistor (For VHF oscillator applications) |
Siemens |
| 10810 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 10811 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 10812 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 10813 |
Q62702-G0057 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 10814 |
Q62702-G0058 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 �� block LNA / MIX Unconditionally stable) |
Siemens |
| 10815 |
Q62702-G0067 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 10816 |
Q62702-G0071 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 10817 |
Q62702-G38 |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 10818 |
Q62702-G44 |
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) |
Siemens |
| 10819 |
Q62702-K0047 |
NEU: 2fach-Silizium-PIN-Fotodiode in SMT NEW: 2-Chip Silicon PIN Photodiode in SMT |
Siemens |
| 10820 |
Q62702-K34 |
6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array |
Siemens |
| 10821 |
Q62702-K35 |
6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array |
Siemens |
| 10822 |
Q62702-K8 |
3fach-Silizium-Fotodiodenzeile 3-Chip Silicon Photodiode Array |
Siemens |
| 10823 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 10824 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 10825 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 10826 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 10827 |
Q62702-M0002 |
PNP Silicon Transistors |
Siemens |
| 10828 |
Q62702-M0003 |
PNP Silicon Transistor |
Siemens |
| 10829 |
Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
Siemens |
| 10830 |
Q62702-P0330 |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package |
Siemens |
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