| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
1N76 |
Diode Switching 100V 10A 2-Pin |
New Jersey Semiconductor |
| 1082 |
1N78M |
Diode Switching 100V 125A 2-Pin DO-8 |
New Jersey Semiconductor |
| 1083 |
1N79 |
Diode Switching 100V 10A 2-Pin |
New Jersey Semiconductor |
| 1084 |
1N82 |
Diode Switching 50V 0.005A 2-Pin Case H |
New Jersey Semiconductor |
| 1085 |
1N821 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1086 |
1N821A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1087 |
1N823 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1088 |
1N823A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1089 |
1N825 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1090 |
1N825A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1091 |
1N827 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1092 |
1N827A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1093 |
1N829 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1094 |
1N829A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 1095 |
1N83 |
Diode Switching 50V 0.005A 2-Pin Case H |
New Jersey Semiconductor |
| 1096 |
1N85 |
Diode Switching 50V 0.005A 2-Pin Case H |
New Jersey Semiconductor |
| 1097 |
1N91 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 1098 |
1N914 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 1099 |
1N914 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 1100 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 1101 |
1N914 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 1102 |
1N914 |
FAST SWITCHING DIODE |
Diodes |
| 1103 |
1N914 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 |
New Jersey Semiconductor |
| 1104 |
1N914 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 1105 |
1N914 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
| 1106 |
1N914 |
Glass passivated silicon switching diodes for medium and small currents |
Texas Instruments |
| 1107 |
1N914 |
Fast Switching Diode |
Vishay |
| 1108 |
1N914-1 |
Silicon Switching Diode DO-35 Glass Package |
Microsemi |
| 1109 |
1N914-1 |
Diode Switching 75V 0.075A 2-Pin DO-35 |
New Jersey Semiconductor |
| 1110 |
1N914A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
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