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Datasheets for . A

Datasheets found :: 3589
Page: | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 |
No. Part Name Description Manufacturer
1081 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
1082 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
1083 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
1084 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
1085 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
1086 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
1087 K4R271869B-MCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
1088 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
1089 K4R271869B-NCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
1090 K4R271869B-NCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
1091 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
1092 K4R441869AM-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
1093 K4R441869AM-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
1094 K4R441869AN-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
1095 K4R441869AN-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
1096 K4R441869AN-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
1097 K6EB-110V K-relay. Uniquely designed relay. 6 form C. Coil voltage 110 V DC. Plug-in and solder. High sensitivity relay. Amber sealed type. Matsushita Electric Works(Nais)
1098 KESRX04IG 260 to 470MHz. ASK Receiver with Power Down Zarlink Semiconductor
1099 KESRX04QP1S 260 to 470MHz. ASK Receiver with Power Down Zarlink Semiconductor
1100 KESRX04QP1T 260 to 470MHz. ASK Receiver with Power Down Zarlink Semiconductor
1101 KLC171_2 Semiconductor fuse. Ampere rating 17 1/2 A. 600 VAC. Littelfuse
1102 KM416RD8AC-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
1103 KM416RD8AC-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
1104 KM416RD8AC-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
1105 KM416RD8AD-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
1106 KM416RD8AD-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
1107 KM416RD8AD-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
1108 KM416RD8AS-RM80 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
1109 KM416RD8AS-SM80 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
1110 KM418RD8AC-RG60 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic


Datasheets found :: 3589
Page: | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 |



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