| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
MST6411C |
0.56 INCH (14.2MM) THREE DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 1082 |
MST6440C |
0.56 INCH (14.2MM) THREE DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 1083 |
MST6441C |
0.56 INCH (14.2MM) THREE DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 1084 |
MST6910C |
0.56 INCH (14.2MM) THREE DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 1085 |
MST6911C |
0.56 INCH (14.2MM) THREE DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 1086 |
MST6940C |
0.56 INCH (14.2MM) THREE DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 1087 |
MST6941C |
0.56 INCH (14.2MM) THREE DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 1088 |
MX536AJQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
| 1089 |
MX536AKQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
| 1090 |
MX536ASQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
| 1091 |
N303AP |
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m |
Fairchild Semiconductor |
| 1092 |
N303AS |
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m |
Fairchild Semiconductor |
| 1093 |
NNCD6.2MF |
LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DUAL TYPE: COMMON ANODE 3-PIN MINI MOLD |
NEC |
| 1094 |
NNCD6.2MF-T1 |
ESD noise clipping diode 3pin SC-59 Low capacitance,Hi ESD type |
NEC |
| 1095 |
NNCD6.2MF-T2 |
ESD noise clipping diode 3pin SC-59 Low capacitance,Hi ESD type |
NEC |
| 1096 |
NNCD6.2MG |
LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD |
NEC |
| 1097 |
NNCD6.2MG-T1 |
ESD noise clipping diode 5pin SC-74A Low capacitance,Hi ESD type |
NEC |
| 1098 |
NNCD6.2MG-T2 |
ESD noise clipping diode 5pin SC-74A Low capacitance,Hi ESD type |
NEC |
| 1099 |
NSVA397 |
422.2MHz Specified Low Power Radio Station |
New Japan Radio |
| 1100 |
NTMFS4C35N |
Power MOSFET 30 V, 80 A, 3.2mOhm Single N-Channel, SO-8 FL |
ON Semiconductor |
| 1101 |
P2750 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1102 |
P2750-06 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1103 |
P2750-08 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1104 |
P3257-30 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1105 |
P3257-31 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1106 |
P3981 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1107 |
P3981-01 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1108 |
Q62702-F1296 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1109 |
Q62702-F1490 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1110 |
R1868-01 |
Spectral responce: 300 to 650nm; 3000Vdc; anode current: 0.2mA; photomultiplier tube |
Hamamatsu Corporation |
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