No. |
Part Name |
Description |
Manufacturer |
1081 |
1N78D |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
1082 |
1N78E |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
1083 |
1N78F |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
1084 |
1N79 |
Meter Rectifier - to 3,000 MHz |
Motorola |
1085 |
1N805 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1086 |
1N82 |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
1087 |
1N821 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1088 |
1N821A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1089 |
1N823 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1090 |
1N823A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1091 |
1N825 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1092 |
1N825A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1093 |
1N827 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1094 |
1N827A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1095 |
1N829 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1096 |
1N829A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
1097 |
1N82A |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
1098 |
1N82AG |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
1099 |
1N82G |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
1100 |
1N909 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1101 |
1N910 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1102 |
1N911 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1103 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
1104 |
1N914A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
1105 |
1N914B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
1106 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
1107 |
1N916A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
1108 |
1N916B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
1109 |
1N933 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1110 |
1N949 |
60 V, 500 mA, gold bonded diode |
BKC International Electronics |
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