| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
IRF7233PBF |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1082 |
IRF7233TR |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1083 |
IRF7233TRPBF |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1084 |
IRF9233 |
5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 1085 |
IRF9233 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 1086 |
IRF9233 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 5.5A |
Siliconix |
| 1087 |
IRFB4233 |
PDP Switch 230V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 1088 |
IRFB4233PBF |
PDP Switch 230V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 1089 |
IRFF233 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 4.5A |
Siliconix |
| 1090 |
IRFF9233 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 3.5A |
Siliconix |
| 1091 |
IRFP9233 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 1092 |
IRMD2336DJ |
Complete 3-phase ac motor drive system |
International Rectifier |
| 1093 |
IRS2330 |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 1094 |
IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 1095 |
IRS2330DJTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 1096 |
IRS2330DSTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 1097 |
IRS2330JTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 1098 |
IRS2330STRPBF |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 2.0us. |
International Rectifier |
| 1099 |
IRS2332 |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 1100 |
IRS2332D |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 1101 |
IRS2332DSTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 1102 |
IRS2332JTRPBF |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us. |
International Rectifier |
| 1103 |
IRS2334M |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications in a 28_lead 5x5 MLPQ |
International Rectifier |
| 1104 |
IRS2334MPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications in a 28_lead 5x5 MLPQ |
International Rectifier |
| 1105 |
IRS2334MTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications in a 28_lead 5x5 MLPQ |
International Rectifier |
| 1106 |
IRS2334S |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications in a 20-Lead SOIC |
International Rectifier |
| 1107 |
IRS2334SPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications in a 20-Lead SOIC |
International Rectifier |
| 1108 |
IRS2334STRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications in a 20-Lead SOIC |
International Rectifier |
| 1109 |
IRS2336 |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications |
International Rectifier |
| 1110 |
IRS23364D |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications |
International Rectifier |
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