| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
KM684000LTI-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
| 1082 |
KM684000LTI-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
| 1083 |
KM684000LTI-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
| 1084 |
KM684000LTI-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
| 1085 |
KM684000LTI-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
| 1086 |
KM684000LTI-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
| 1087 |
KM684000R-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
| 1088 |
KM684000R-5 |
512Kx8 bit CMOS static RAM, 55ns |
Samsung Electronic |
| 1089 |
KM684000R-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
| 1090 |
KM684000R-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
| 1091 |
KM684000T-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
| 1092 |
KM684000T-5 |
512Kx8 bit CMOS static RAM, 55ns |
Samsung Electronic |
| 1093 |
KM684000T-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
| 1094 |
KM684000T-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
| 1095 |
KM684002 |
512Kx8 Bit High Speed Static RAM(5V Operating) / Revolutionary Pin out |
Samsung Electronic |
| 1096 |
KM684002-17 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
| 1097 |
KM684002-20 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
| 1098 |
KM684002-25 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
| 1099 |
KM684002E-17 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
| 1100 |
KM684002E-20 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
| 1101 |
KM684002E-25 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
| 1102 |
KM684002I-17 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
| 1103 |
KM684002I-20 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
| 1104 |
KM684002I-25 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
| 1105 |
M280 |
ROM 2Kx8 bit |
SGS-ATES |
| 1106 |
M281 |
ROM 2Kx8 bit |
SGS-ATES |
| 1107 |
M28F256-12B1 |
Memory configuration 32Kx8 Memory type Flash Memory size 256 K-bit 256K (32K8) FLASH memory - 120ns Access |
SGS Thomson Microelectronics |
| 1108 |
M28F256-12C1 |
Memory configuration 32Kx8 Memory type Flash Memory size 256 K-bit 256K (32K8) FLASH memory - 120ns Access (PLCC) |
SGS Thomson Microelectronics |
| 1109 |
M48Z30-100PM1 |
Memory configuration 32Kx8 Memory type Zeropower RAM Memory size 256 K-bit 256K (32K8) ZEROPOWER?CMOS SRAM - 100ns Access Time data retention 10 Yr |
SGS Thomson Microelectronics |
| 1110 |
MX27L256 |
256K-BIT [32Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
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