| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
1SS392 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 1082 |
1SS393 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 1083 |
1SS394 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 1084 |
1SS395 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 1085 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 1086 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 1087 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 1088 |
1SS401 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 1089 |
1SS402 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 1090 |
1SS403 |
Diode Silicon Epitaxial Schottoky Barrier Type High Voltage Switching Applications |
TOSHIBA |
| 1091 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
| 1092 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 1093 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 1094 |
1SV101 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM TUNER APPLICATIONS |
TOSHIBA |
| 1095 |
1SV102 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 1096 |
1SV103 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 1097 |
1SV128 |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS |
TOSHIBA |
| 1098 |
1SV147 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 1099 |
1SV149 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 1100 |
1SV160 |
Variable Capacitance Diode AFC Application for FM Receiver |
TOSHIBA |
| 1101 |
1SV225 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 1102 |
1SV228 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 1103 |
1SV234 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type |
SANYO |
| 1104 |
1SV237 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 1105 |
1SV241 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type |
SANYO |
| 1106 |
1SV246 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type |
SANYO |
| 1107 |
1SV247 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type |
SANYO |
| 1108 |
1SV248 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type |
SANYO |
| 1109 |
1SV249 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type |
SANYO |
| 1110 |
1SV250 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type |
SANYO |
| | | |
