No. |
Part Name |
Description |
Manufacturer |
1081 |
1S1219H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
1082 |
1S1220H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
1083 |
1S1549 |
Silicon epitaxial planar schottky barrier mixer diode |
TOSHIBA |
1084 |
1S1553 |
Silicon epitaxial planar type diode. |
Panasonic |
1085 |
1S1553 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
1086 |
1S1554 |
Silicon epitaxial planar type diode. |
Panasonic |
1087 |
1S1554 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
1088 |
1S1555 |
Silicon epitaxial planar type diode. |
Panasonic |
1089 |
1S1555 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
1090 |
1S1585 |
Silicon epitaxial planar type diode. |
Panasonic |
1091 |
1S1585 |
Silicon Epitaxial Planar Type |
TOSHIBA |
1092 |
1S1586 |
Silicon epitaxial planar type diode. |
Panasonic |
1093 |
1S1586 |
Silicon Epitaxial Planar Type |
TOSHIBA |
1094 |
1S1587 |
Silicon epitaxial planar type diode. |
Panasonic |
1095 |
1S1587 |
Silicon Epitaxial Planar Type |
TOSHIBA |
1096 |
1S1588 |
Silicon epitaxial planar type diode. |
Panasonic |
1097 |
1S1588 |
Silicon Epitaxial Planar Type |
TOSHIBA |
1098 |
1S1658 |
Silicon epitaxial planar variable capacitance diode, FM AFC applications |
TOSHIBA |
1099 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
1100 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
1101 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
1102 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
1103 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
1104 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
1105 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
1106 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
1107 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
1108 |
1S2092 |
Silicon epitaxial planar type diode. |
Panasonic |
1109 |
1S2092 |
SILICON EPTAXIAL PLANAR TYPE |
TOSHIBA |
1110 |
1S2094 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
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