No. |
Part Name |
Description |
Manufacturer |
1081 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
1082 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
1083 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
1084 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1085 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1086 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
1087 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1088 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
1089 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
1090 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
1091 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1092 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
1093 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
1094 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
1095 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
1096 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
1097 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
1098 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
1099 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
1100 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
1101 |
2N6496 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
1102 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
1103 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
1104 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1105 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1106 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1107 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1108 |
2N6517 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1109 |
2N6517BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1110 |
2N6517CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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