| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
AFM04P3-000 |
Low Noise/Medium Power GaAs MESFET Chip |
Alpha Industries Inc |
| 1082 |
AFM04P3-212 |
Low Noise/Medium Power GaAs MESFET Chips |
Alpha Industries Inc |
| 1083 |
AFM04P3-213 |
Low Noise/Medium Power GaAs MESFET Chips |
Alpha Industries Inc |
| 1084 |
AH101 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1085 |
AH101-PCB |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1086 |
AH102 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1087 |
AH102-PCB |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1088 |
AH102-PCS |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1089 |
AH102A |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1090 |
AH102A-G |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1091 |
AH102A-PCB2000 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1092 |
AH102A-PCB900 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1093 |
AH201 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1094 |
AH201-PCB-1900 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1095 |
AH201-PCB-900 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1096 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1097 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1098 |
AN1541 |
A MEDIUM POWER AMPLIFIER AT 1.8GHZ USING THE NPN SI START499 TRANSISTOR |
SGS Thomson Microelectronics |
| 1099 |
ASMC-PAB9-TV005 |
ASMC-PAB9-TV005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
| 1100 |
ASMC-PHB9-TW005 |
ASMC-PHB9-TW005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
| 1101 |
ASMC-PRB9-TV005 |
ASMC-PRB9-TV005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
| 1102 |
ASZ15 |
Germanium power transistor, 10A |
COSEM |
| 1103 |
ASZ15 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 1104 |
ASZ16 |
Germanium power transistor, 10A |
COSEM |
| 1105 |
ASZ16 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 1106 |
ASZ17 |
Germanium power transistor, 10A |
COSEM |
| 1107 |
ASZ17 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 1108 |
ASZ18 |
Germanium power transistor, 10A |
COSEM |
| 1109 |
ASZ18 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
| 1110 |
AT-31625 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
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