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Datasheets for LAR TRANSIS

Datasheets found :: 3061
Page: | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 |
No. Part Name Description Manufacturer
1081 CM1200HA-50H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1082 CM1200HA-66H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1083 CM1200HB-50H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1084 CM1200HB-66H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1085 CM1200HC-66H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1086 CM200TU-5F Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
1087 CM350DU-5F Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
1088 CM400DU-5F Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
1089 CM400DY-50H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1090 CM400DY-66H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1091 CM400HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1092 CM400HB-90H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1093 CM450HA-5F Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
1094 CM600DU-5F Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
1095 CM600DY-34H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1096 CM600E2Y-34H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1097 CM600HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1098 CM600HA-5F Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
1099 CM600HB-90H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1100 CM600HN-5F Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
1101 CM800DZ-34H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1102 CM800E2Z-66H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1103 CM800HA-34H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1104 CM800HA-50H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1105 CM800HA-66H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1106 CM800HB-50H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1107 CM800HB-66H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1108 CM900HB-90H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules Mitsubishi Electric Corporation
1109 CODE TYPE designation CODE for silicon power bipolar transistors Philips
1110 CPH3106 Bipolar Transistor, -12V, -3A, Low VCE(sat), PNP Single CPH3 ON Semiconductor


Datasheets found :: 3061
Page: | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 |



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