| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1082 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 1083 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1084 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1085 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1086 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1087 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1088 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1089 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1090 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1091 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1092 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1093 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1094 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1095 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1096 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1097 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1098 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1099 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1100 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1101 |
3SK73 |
Silicon N Channel Depletion Dual inulated Gate MOS type transistor |
TOSHIBA |
| 1102 |
400CMQ035 |
35V 400A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
| 1103 |
400CMQ040 |
40V 400A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
| 1104 |
400CMQ045 |
45V 400A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
| 1105 |
400CNQ035 |
35V 400A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
| 1106 |
400CNQ040 |
40V 400A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
| 1107 |
400CNQ045 |
45V 400A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
| 1108 |
400DMQ035 |
35V 400A Schottky DOUBLER Diode in a TO-244AB Isolated package |
International Rectifier |
| 1109 |
400DMQ040 |
40V 400A Schottky DOUBLER Diode in a TO-244AB Isolated package |
International Rectifier |
| 1110 |
400DMQ045 |
45V 400A Schottky DOUBLER Diode in a TO-244AB Isolated package |
International Rectifier |
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