| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
2N887 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1082 |
2N887 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1083 |
2N887A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1084 |
2N888 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1085 |
2N888 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1086 |
2N888A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1087 |
2N889 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1088 |
2N889 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1089 |
2N889A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1090 |
2N890 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1091 |
2N890 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1092 |
2N891 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1093 |
2N891 |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
| 1094 |
2N918ACSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 1095 |
2N918CSM |
GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1096 |
2N929 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 1097 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1098 |
2N995 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 1099 |
2S304A |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. |
SemeLAB |
| 1100 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 1101 |
2SC5265 |
Inverter-controlled Lighting Applications |
SANYO |
| 1102 |
2SC5265LS |
NPN Triple Diffused Planar Silicon Transistor Inverter-Controlled Lighting Applications |
SANYO |
| 1103 |
2SC982 |
Silicon NPN epitaxial planar transistor, Printer Drive, Core Drive and LED drive, low frequency amplifier applications |
TOSHIBA |
| 1104 |
2SC982 |
NPN EPITAXIAL TYPE (PRINTER DRIVE/ CORE DRIVER AND LED DRIVE/ LOW FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1105 |
2SC982TM |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications |
TOSHIBA |
| 1106 |
2SF321 |
Silicon-controlled rectifiers 5A |
TOSHIBA |
| 1107 |
2SF322 |
Silicon-controlled rectifiers 5A |
TOSHIBA |
| 1108 |
2SF323 |
Silicon-controlled rectifiers 5A |
TOSHIBA |
| 1109 |
2SF324 |
Silicon-controlled rectifiers 5A |
TOSHIBA |
| 1110 |
2SF325 |
Silicon-controlled rectifiers 5A |
TOSHIBA |
| | | |
