| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
2N1711 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1082 |
2N1711 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1083 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 1084 |
2N1711 |
General purpose NPN transistor |
FERRANTI |
| 1085 |
2N1711 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 1086 |
2N1711 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 1087 |
2N1711 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 1088 |
2N1711 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
| 1089 |
2N1711A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 1090 |
2N1711B |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1091 |
2N1716 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1092 |
2N1717 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1093 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1094 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1095 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1096 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1097 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1098 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1099 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1100 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1101 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1102 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1103 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1104 |
2N1839 |
General purpose transistor |
Boca Semiconductor Corporation |
| 1105 |
2N1889 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1106 |
2N1889 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 1107 |
2N1890 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1108 |
2N1890 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 1109 |
2N1893 |
GENERAL PURPOSE TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
| 1110 |
2N1893 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
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