| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
MCR846-3 |
Silicon controlled rectifiers for low-power switching and control applications, Peak Reverse Blocking Voltage 100 |
Motorola |
| 1082 |
MCR846-4 |
Silicon controlled rectifiers for low-power switching and control applications, Peak Reverse Blocking Voltage 200 |
Motorola |
| 1083 |
MG100H2YL1 |
NPN transistor for high power switching and notor control applications, 600V, 100A |
Westcode Semiconductors |
| 1084 |
MG100M2YK1 |
NPN transistor for high power switching and notor control applications, 1000V, 100A |
Westcode Semiconductors |
| 1085 |
MG100Q2YK1 |
NPN transistor for high power switching and notor control applications, 1200V, 100A |
Westcode Semiconductors |
| 1086 |
MG150M2YK1 |
NPN transistor for high power switching and notor control applications, 1000V, 150A |
Westcode Semiconductors |
| 1087 |
MG150Q2YK1 |
NPN transistor for high power switching and notor control applications, 1200V, 150A |
Westcode Semiconductors |
| 1088 |
MG200M1UK1 |
NPN transistor for high power switching and notor control applications, 1000V, 200A |
Westcode Semiconductors |
| 1089 |
MG200Q1UK1 |
NPN transistor for high power switching and notor control applications, 1200V, 200A |
Westcode Semiconductors |
| 1090 |
MG300G1UL1 |
Silicon NPN CTR module for high switching and motor control applications |
TOSHIBA |
| 1091 |
MG300M1UK1 |
NPN transistor for high power switching and notor control applications, 1000V, 300A |
Westcode Semiconductors |
| 1092 |
MG300Q1UK1 |
NPN transistor for high power switching and notor control applications, 1200V, 300A |
Westcode Semiconductors |
| 1093 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 1094 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 1095 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
| 1096 |
MM1214XF |
Control of lithium ion battery charging and discharging |
Mitsumi Electric |
| 1097 |
MM1248 |
Control of Lithium Ion Battery Charging and Discharging |
Mitsumi Electric |
| 1098 |
MM1248XF |
Control of lithium ion battery charging and discharging |
Mitsumi Electric |
| 1099 |
MM3053 |
NPN Silicon Switching and amplifier transistor |
Motorola |
| 1100 |
MM3903 |
NPN Silicon Switching and Amplifier Transistor |
Motorola |
| 1101 |
MM3904 |
NPN Silicon Switching and Amplifier Transistor |
Motorola |
| 1102 |
MM3905 |
PNP Silicon Switching and Amplifier Transistor |
Motorola |
| 1103 |
MM3906 |
PNP Silicon Switching and Amplifier Transistor |
Motorola |
| 1104 |
MMC4096 |
Gated J-K master-slave flip-flop (inverting and non-inverting) (in Romanian) |
Microelectronica |
| 1105 |
MMC4096 |
Gated "J-K" master-slave flip-flop (inverting and non-inverting) |
Microelectronica |
| 1106 |
MMCM2907 |
MICRO-T PNP Silicon Switching and Amplifier Transistor |
Motorola |
| 1107 |
MMCM3903 |
MICRO-T NPN Silicon Switching and Amplifier Transistor |
Motorola |
| 1108 |
MMCM3904 |
MICRO-T NPN Silicon Switching and Amplifier Transistor |
Motorola |
| 1109 |
MMCM3905 |
MICRO-T PNP Silicon Switching and Amplifier Transistor |
Motorola |
| 1110 |
MMCM3906 |
MICRO-T PNP Silicon Switching and Amplifier Transistor |
Motorola |
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