| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
BDX30 |
PNP silicon power transistor for LF power amplifiers and switch applications |
Siemens |
| 1082 |
BDX30-10 |
PNP silicon power transistor for LF power amplifiers and switch applications |
Siemens |
| 1083 |
BDX30-6 |
PNP silicon power transistor for LF power amplifiers and switch applications |
Siemens |
| 1084 |
BDX53 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1085 |
BDX53A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1086 |
BDX53B |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1087 |
BDX53C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1088 |
BDX54 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1089 |
BDX54A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1090 |
BDX54B |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1091 |
BDX54C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1092 |
BDX85 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1093 |
BDX85A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1094 |
BDX85B |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1095 |
BDX85C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1096 |
BDX86 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1097 |
BDX86A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1098 |
BDX86B |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1099 |
BDX86C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1100 |
BDX87 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1101 |
BDX87A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1102 |
BDX87B |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1103 |
BDX87C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1104 |
BDX88 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1105 |
BDX88A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1106 |
BDX88B |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1107 |
BDX88C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1108 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1109 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1110 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
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