No. |
Part Name |
Description |
Manufacturer |
1081 |
2N5227 |
General purpose PNP Silicon Low-Level amplifier transistor |
ITT Semiconductors |
1082 |
2N5245 |
N-Channel RF Amplifier |
Fairchild Semiconductor |
1083 |
2N5245 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
1084 |
2N5245_L99Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
1085 |
2N5246 |
N-Channel RF Amplifier |
Fairchild Semiconductor |
1086 |
2N5246 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
1087 |
2N5246_D74Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
1088 |
2N5247 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
1089 |
2N5248 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
1090 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
1091 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
1092 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
1093 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
1094 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
1095 |
2N5302 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
1096 |
2N5307 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
1097 |
2N5307 |
NPN DARLINGTON AMPLIFIER |
Micro Electronics |
1098 |
2N5308 |
NPN DARLINGTON AMPLIFIER |
Micro Electronics |
1099 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
1100 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
1101 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
1102 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
1103 |
2N5366 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
1104 |
2N5366_D26Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
1105 |
2N5366_D27Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
1106 |
2N5366_D75Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
1107 |
2N5368 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
1108 |
2N5369 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
1109 |
2N5370 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
1110 |
2N5371 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
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