No. |
Part Name |
Description |
Manufacturer |
1081 |
2SC5097 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
1082 |
2SC5098 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
1083 |
2SC509G |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
1084 |
2SC5106 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
1085 |
2SC5107 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
1086 |
2SC5108 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
1087 |
2SC5108FT |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
1088 |
2SC5109 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
1089 |
2SC5110 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
1090 |
2SC5111 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
1091 |
2SC5111FT |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
1092 |
2SC5136 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
1093 |
2SC5137 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
1094 |
2SC5139 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
1095 |
2SC5154 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATION DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
1096 |
2SC5155 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Applications |
SANYO |
1097 |
2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
1098 |
2SC5174 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
1099 |
2SC5175 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
1100 |
2SC5176 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
1101 |
2SC5177 |
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
1102 |
2SC5178 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
1103 |
2SC5178-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
1104 |
2SC5178-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
1105 |
2SC5179 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
1106 |
2SC5179-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
1107 |
2SC5179-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
1108 |
2SC5180 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
1109 |
2SC5181 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
1110 |
2SC5181-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| | | |