| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
2SB731 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 1082 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1083 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1084 |
2SB765 |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
| 1085 |
2SB765K |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K |
Hitachi Semiconductor |
| 1086 |
2SB77 |
GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
Unknow |
| 1087 |
2SB903 |
30V/12A High-Speed Switching Applications |
SANYO |
| 1088 |
2SB904 |
PNP Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 1089 |
2SB919 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 1090 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1091 |
2SC103A |
High-Speed Switching Transistor |
TOSHIBA |
| 1092 |
2SC106 |
High-Speed Switching Transistor |
TOSHIBA |
| 1093 |
2SC107 |
High-Speed Switching Transistor |
TOSHIBA |
| 1094 |
2SC108 |
High-Speed Switching Transistor |
TOSHIBA |
| 1095 |
2SC109 |
High-Speed Switching Transistor |
TOSHIBA |
| 1096 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 1097 |
2SC13 |
High-Speed Switching Transistor |
TOSHIBA |
| 1098 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 1099 |
2SC14 |
High-Speed Switching Transistor |
TOSHIBA |
| 1100 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 1101 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 1102 |
2SC1621 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1103 |
2SC1621R |
High Speed Switching NPN silicon epitaxial transistor |
NEC |
| 1104 |
2SC1656 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98108 is also the datasheet of 2SC1656 Grd C, see the Electrical Characteristics table) |
NEC |
| 1105 |
2SC1658 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98141 is also the datasheet of 2SC1658 Grd C, see the Electrical Characteristics table) |
NEC |
| 1106 |
2SC1662 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98241 is also the datasheet of 2SC1662 GRD C, see the Electrical Characteristics table) |
NEC |
| 1107 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 1108 |
2SC1707A |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 1109 |
2SC1707AH |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 1110 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
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