No. |
Part Name |
Description |
Manufacturer |
1081 |
SD1536-03 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
1082 |
SD1536-08 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
1083 |
SD1536-3 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
1084 |
SD1536-8 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
1085 |
SD1540-3 |
NPN Power RF Transistor designed for IFF/DME and TACAN applications |
SGS Thomson Microelectronics |
1086 |
SD1541 |
NPN Power RF Transistor designed for IFF/DME applications |
SGS Thomson Microelectronics |
1087 |
SD1546-1 |
NPN power RF transistor designed for IFF/DME applications |
SGS Thomson Microelectronics |
1088 |
SD1550 |
NPN Planar Pulsed Transistor designed for TACAN applications |
SGS Thomson Microelectronics |
1089 |
SD1551 |
NPN Planar Pulsed Transistor designed for use in TACAN systems |
SGS Thomson Microelectronics |
1090 |
SD1552 |
NPN Planar Pulsed Transistor designed for use in TACAN systems |
SGS Thomson Microelectronics |
1091 |
SD1554 |
Silicon NPN Power RF Transistor designed for Mode-S Transponder Applications |
SGS Thomson Microelectronics |
1092 |
SD1555 |
Silicon NPN Power RF Transistor designed for Mode-S Interrogator applications |
SGS Thomson Microelectronics |
1093 |
SD1556 |
Silicon NPN Power RF Transistor designed for Mode-S Transponder Applications |
SGS Thomson Microelectronics |
1094 |
SD1557 |
Silicon NPN Power RF Transistor designed for Mode-S Interrogator applications |
SGS Thomson Microelectronics |
1095 |
SD1850 |
2.3GHz 0.2W 15V NPN silicon transistor designed for high gain linear performance at 2.0GHz |
SGS Thomson Microelectronics |
1096 |
SD1851 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
1097 |
SD1851-04 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
1098 |
SD1853 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
1099 |
SD1862 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
1100 |
SD1868 |
1.6-1.65GHz 30W 28V NPN transistor designed for Microwave telecommunication applications |
SGS Thomson Microelectronics |
1101 |
SD1869 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
1102 |
SD1870 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
1103 |
SD1875 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
1104 |
SD1879 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
1105 |
SD1891 |
1.65GHz 3W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
1106 |
SD1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
1107 |
SD1895 |
1.65GHz 15W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
1108 |
SE9300 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1109 |
SE9301 |
Leaded Power Transistor Darlington |
Central Semiconductor |
1110 |
SE9302 |
Leaded Power Transistor Darlington |
Central Semiconductor |
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