| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
HLMP-2885-FG000 |
HLMP-2885-FG000 · LED Light Bars |
Agilent (Hewlett-Packard) |
| 1082 |
HLMP-2950 |
HLMP-2950 · LED Light Bars |
Agilent (Hewlett-Packard) |
| 1083 |
HLMP-2965 |
HLMP-2965 · LED Light Bars |
Agilent (Hewlett-Packard) |
| 1084 |
HLMP-2B85 |
LED LIGHT BARS |
Fairchild Semiconductor |
| 1085 |
HSH2501NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
| 1086 |
HSH2510NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
| 1087 |
IRPLCFL8U |
Three Level Dimming CFL Fluorescent Ballast |
International Rectifier |
| 1088 |
IRPLDIM3 |
Wide Range Input Linear Dimming Fluorescent Ballast |
International Rectifier |
| 1089 |
IRPLDIM5E |
Four Level Switch Dim Fluorescent Ballast |
International Rectifier |
| 1090 |
IRPLLNR3 |
Universal Input Linear Fluorescent Ballast using the IR2167 |
International Rectifier |
| 1091 |
IRPLLNR4 |
Universal Input Linear Fluorescent Ballast using the IR2166 |
International Rectifier |
| 1092 |
IRPLLNR5 |
Universal Input Linear Fluorescent Ballast for 54W TL5 Lamp |
International Rectifier |
| 1093 |
IRPLLNR7 |
Universal Input Linear Flourescent Ballast using the IRS2166DPBF |
International Rectifier |
| 1094 |
IRPLMB1E |
Mini-ballast for single 25W compact fluorescent ballast, European version with 230VACin |
International Rectifier |
| 1095 |
IRS2538DS |
Magnetic Replacement Ballast IC in a 8-Lead SOIC Package |
International Rectifier |
| 1096 |
IRS2538DSTRPBF |
Magnetic Replacement Ballast IC in a 8-Lead SOIC Package |
International Rectifier |
| 1097 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 1098 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 1099 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 1100 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 1101 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 1102 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 1103 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
| 1104 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 1105 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 1106 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 1107 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 1108 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 1109 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 1110 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
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