No. |
Part Name |
Description |
Manufacturer |
1081 |
Q62702-P1196 |
IR-EMPFANGER/DEMODULATOR-BAUSTEIN, IR-RECEIVER/DEMODULATOR DEVICE |
Siemens |
1082 |
Q62702-P1197 |
IR-EMPFANGER/DEMODULATOR-BAUSTEIN, IR-RECEIVER/DEMODULATOR DEVICE |
Siemens |
1083 |
Q62702-P1198 |
IR-EMPFANGER/DEMODULATOR-BAUSTEIN, IR-RECEIVER/DEMODULATOR DEVICE |
Siemens |
1084 |
Q62702-P1199 |
IR-EMPFANGER/DEMODULATOR-BAUSTEIN, IR-RECEIVER/DEMODULATOR DEVICE |
Siemens |
1085 |
Q62702-P1200 |
IR-EMPFANGER/DEMODULATOR-BAUSTEIN, IR-RECEIVER/DEMODULATOR DEVICE |
Siemens |
1086 |
Q62702-P1201 |
IR-EMPFANGER/DEMODULATOR-BAUSTEIN, IR-RECEIVER/DEMODULATOR DEVICE |
Siemens |
1087 |
RCA-40953 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
1088 |
RCA-40954 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
1089 |
RCA-40955 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
1090 |
RF TRANSISTOR DESIGN |
Chip fabrication, basic operation and main parameters, noise, parasitic elements, packaging |
SGS-ATES |
1091 |
SD1014-02 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
1092 |
SD1143-01 |
12.5V Class C 10W epitaxial silicon NPN planar transistor designed primarly for VHF communications |
SGS Thomson Microelectronics |
1093 |
SD1274-1 |
175MHz 12.5V 30W NPN RF Transistor designed primarily for VHF communications |
SGS Thomson Microelectronics |
1094 |
SD1400-02 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
1095 |
SD1400-03 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range |
SGS Thomson Microelectronics |
1096 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
1097 |
SD1429-03 |
15W 12.5V Class C NPN RF transistor designed for UHF communications |
SGS Thomson Microelectronics |
1098 |
SD1451 |
30MHz 12.5V 60W NPN HF Transistor designed primarily for SSB communications |
SGS Thomson Microelectronics |
1099 |
SD1495 |
870MHzz 24V 35W Class C transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
1100 |
SD1495-03 |
24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz |
SGS Thomson Microelectronics |
1101 |
SD1500 |
NPN Planar Pulsed Transistor designed for use in L BAND radar applications |
SGS Thomson Microelectronics |
1102 |
SD1501 |
1.2-1.4GHz 30W 35V RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
1103 |
SD1505 |
1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND |
SGS Thomson Microelectronics |
1104 |
SD1507 |
1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND |
SGS Thomson Microelectronics |
1105 |
SD1511-08 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
1106 |
SD1512 |
NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
1107 |
SD1513 |
NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
1108 |
SD1514 |
NPN transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
1109 |
SD1520-3 |
NPN transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
1110 |
SD1520-8 |
NPN pulsed power transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
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