| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
IC61SF51218D-9.5TQ |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1082 |
IC61SF51218D-9.5TQI |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1083 |
IC61SF51218T |
SYNCHRONOUS STATIC RAM, Flow Through |
ICSI |
| 1084 |
IC61SF51218T-6.5TQ |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1085 |
IC61SF51218T-6.5TQI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1086 |
IC61SF51218T-7.5TQ |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1087 |
IC61SF51218T-7.5TQI |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1088 |
IC61SF51218T-8.5TQ |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1089 |
IC61SF51218T-8.5TQI |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1090 |
IC61SF51218T-9.5TQ |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1091 |
IC61SF51218T-9.5TQI |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 1092 |
IC61SF6432 |
SYNCHRONOUS STATIC RAM, Flow Through |
ICSI |
| 1093 |
IS61SF12832 |
SYNCHRONOUS STATIC RAM, Flow Through |
ICSI |
| 1094 |
IS61SF12836 |
SYNCHRONOUS STATIC RAM, Flow Through |
ICSI |
| 1095 |
IS61SF6432 |
SYNCHRONOUS STATIC RAM, Flow Through |
ICSI |
| 1096 |
ISL6292 |
Battery Charger, Single Cell Li-ion or Li-Polymer, Vin >2.4v, Programmable Current Limit, Low Thermal Dissipation, 1% Accuracy |
Intersil |
| 1097 |
JO4045 |
RF Power Transistor 45W 12.5V 175MHz, Gold Metalization, Common Emitter, Low Thermal Resistance |
TRW |
| 1098 |
K7M163625A K7M163235A K7M161825A |
512Kx36/32 & 1Mx18-Bit Flow Through NtRAM� Data Sheet |
Samsung Electronic |
| 1099 |
K7M323625M K7M321825M |
1Mx36 & 2Mx18-Bit Flow Through NtRAM� Data Sheet |
Samsung Electronic |
| 1100 |
K7M801825B |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
| 1101 |
K7M801825B-QC65/75 |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
| 1102 |
K7M803625A |
256Kx36Bit Flow Through NtRAM� Data Sheet |
Samsung Electronic |
| 1103 |
K7M803625B |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
| 1104 |
K7M803625B-QC65/75 |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
| 1105 |
K7N801801B-QC16/13 |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
| 1106 |
K7N801845B-QC16/13 |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
| 1107 |
K7N803601B-QC16/13 |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
| 1108 |
K7N803645B-QC16/13 |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
| 1109 |
MC74LCX540 |
Low-Voltage CMOS Octal Buffer Flow Through Pinout |
ON Semiconductor |
| 1110 |
MC74LCX540-D |
Low-Voltage CMOS Octal Buffer Flow Through Pinout With 5V-Tolerant Inputs and Outputs (3-State, Inverting) |
ON Semiconductor |
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