No. |
Part Name |
Description |
Manufacturer |
10891 |
EVDN409 |
Gate driver IC evaluation board |
IXYS |
10892 |
EVDN409 |
Gate Driver IC Evaluation Boards |
IXYS Corporation |
10893 |
EVIC420 |
DEIC420 High Frequency Gate Driver IC Evaluation Board |
Directed Energy |
10894 |
EVIC420-A |
Gate driver IC evaluation board |
IXYS |
10895 |
EVIC420-B |
Gate driver IC evaluation board |
IXYS |
10896 |
F1001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10897 |
F100101 |
-4.2 V to -5.7 V, triple 5-input OR/NOR gate |
National Semiconductor |
10898 |
F100102 |
-4.2 V to -5.7 V, quint 2-input OR/NOR gate |
National Semiconductor |
10899 |
F100104 |
-4.2 V to -5.7 V, quint AND/NAND gate |
National Semiconductor |
10900 |
F100107 |
-4.2 V to -5.7 V, Low power exclusive OR/NOR gate |
National Semiconductor |
10901 |
F100117 |
-4.2 V to -5.7 V, triple 2-wide OA/OAI gate |
National Semiconductor |
10902 |
F100118 |
-4.2 V to -5.7 V, 5-wide 5,4,4,4,2 OA/OAI gate |
National Semiconductor |
10903 |
F1001C |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10904 |
F1002 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10905 |
F1003 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10906 |
F100301 |
-4.2 V to -5.7 V, Low power triple OR-NOR gate |
National Semiconductor |
10907 |
F100302 |
-4.2 V to -5.7 V, Low power 2-input OR/NOR gate |
National Semiconductor |
10908 |
F100304 |
-4.2 V to -5.7 V, low power quint AND/NAND gate |
National Semiconductor |
10909 |
F100307 |
-4.2 V to -5.7 V, low power quint exclusive OR/NOR gate |
National Semiconductor |
10910 |
F1004 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10911 |
F1005 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10912 |
F1006 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10913 |
F1007 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10914 |
F1008 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10915 |
F1012 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10916 |
F1014 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10917 |
F1015 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10918 |
F1016 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10919 |
F1018 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
10920 |
F1019 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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