No. |
Part Name |
Description |
Manufacturer |
10891 |
2N5079 |
Silicon NPN Transistor |
Motorola |
10892 |
2N508 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
10893 |
2N508 |
Germanium PNP Transistor |
Motorola |
10894 |
2N5080 |
NPN Transistor Medium Power |
Amelco Semiconductor |
10895 |
2N5080 |
Silicon NPN Transistor |
Motorola |
10896 |
2N5081 |
Silicon NPN Transistor |
Motorola |
10897 |
2N5082 |
Silicon NPN Transistor |
Motorola |
10898 |
2N5083 |
Silicon NPN Transistor |
Motorola |
10899 |
2N5083 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
10900 |
2N5083 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
10901 |
2N5084 |
Silicon NPN Transistor |
Motorola |
10902 |
2N5084 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
10903 |
2N5084 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
10904 |
2N5085 |
Silicon NPN Transistor |
Motorola |
10905 |
2N5085 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
10906 |
2N5085 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
10907 |
2N5086 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
10908 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
10909 |
2N5086 |
Low Noise PNP Transistor |
FERRANTI |
10910 |
2N5086 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
10911 |
2N5086 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
10912 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
10913 |
2N5086 |
Silicon PNP Transistor |
Motorola |
10914 |
2N5086 |
PNP Transistor - Low level AMPS |
National Semiconductor |
10915 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
10916 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
10917 |
2N5087 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
10918 |
2N5087 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE |
Continental Device India Limited |
10919 |
2N5087 |
Low Noise PNP Transistor |
FERRANTI |
10920 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
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