| No. |
Part Name |
Description |
Manufacturer |
| 10921 |
RM35HG-34S |
Super Fast Recovery Single Diode (35 Amperes/1700 Volts) |
Powerex Power Semiconductors |
| 10922 |
RM400HA-20S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 10923 |
RM400HA-20S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10924 |
RM400HA-24S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 10925 |
RM400HA-24S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10926 |
RM400HA-24S |
Super Fast Recovery Single Diode Module (400 Amperes/1200 Volts) |
Powerex Power Semiconductors |
| 10927 |
RM400HA-34S |
Super Fast Recovery Single Diode Module (400 Amperes/1700 Volts) |
Powerex Power Semiconductors |
| 10928 |
RM400HV-34S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 10929 |
RM400HV-34S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10930 |
RM50C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10931 |
RM50C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10932 |
RM50CA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10933 |
RM50CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10934 |
RM50DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10935 |
RM50DA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10936 |
RM50DA-C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 10937 |
RM50DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10938 |
RM50DA/CA/C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 10939 |
RM50HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10940 |
RM50HG-12S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 10941 |
RM50HG-12S |
MITSUBISHI FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10942 |
RM50HG-12S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 10943 |
RM50HG-12S |
Super Fast Recovery Single Diode (50 Amperes/600 Volts) |
Powerex Power Semiconductors |
| 10944 |
RM60SZ-6S/-6R |
Fast Recovery Diode Modules, F Series (for welding) |
Mitsubishi Electric Corporation |
| 10945 |
RMB2S |
MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER |
General Semiconductor |
| 10946 |
RMB2S |
Discrete Devices -Bridge Rectifier-Fast Recovery Bridge |
Taiwan Semiconductor |
| 10947 |
RMB2S |
Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier, Forward Current 0.5 A, Reverse Recovery time 150 ns, Reverse Voltage 200 to 400 V |
Vishay |
| 10948 |
RMB4S |
MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER |
General Semiconductor |
| 10949 |
RMB4S |
Discrete Devices -Bridge Rectifier-Fast Recovery Bridge |
Taiwan Semiconductor |
| 10950 |
RMB4S |
Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier, Forward Current 0.5 A, Reverse Recovery time 150 ns, Reverse Voltage 200 to 400 V |
Vishay |
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