No. |
Part Name |
Description |
Manufacturer |
10921 |
BAR64-05W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
10922 |
BAR64-06 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
10923 |
BAR64-06W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
10924 |
BAR64-07 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
10925 |
BAR64-W |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
Siemens |
10926 |
BAT15-014 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
10927 |
BAT15-044 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
10928 |
BAT15-074 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
10929 |
BAT15-104 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
10930 |
BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
10931 |
BAT15-4 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
10932 |
BAT20J |
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE |
ST Microelectronics |
10933 |
BAT20JFILM |
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE |
ST Microelectronics |
10934 |
BAT30 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
10935 |
BAT62 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.) |
Siemens |
10936 |
BAT62-02W |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
10937 |
BAT62-03W |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
Siemens |
10938 |
BAT62-07 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
10939 |
BAT62-07W |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
10940 |
BAT63 |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
Siemens |
10941 |
BAT63-099R |
Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad) |
Siemens |
10942 |
BAY66 |
Silicon power varactor diode for frequency multipliers up to 1 GHz |
VALVO |
10943 |
BAY96 |
Silicon planar diode for use in high efficiency multiplier circuits, input powers up to 30W |
Mullard |
10944 |
BAY96 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to approx. 500 MHz |
VALVO |
10945 |
BB619 |
Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) |
Siemens |
10946 |
BB619C |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV/ VTR tuners) |
Siemens |
10947 |
BB639 |
Varactordiodes - Silicon variable capacitance diode for tuning of extended frequency bands |
Infineon |
10948 |
BB639 |
Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) |
Siemens |
10949 |
BB639C |
Varactordiodes - Silicon variable capacitance diode for tuning of extended frequency bands |
Infineon |
10950 |
BB639C |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) |
Siemens |
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