| No. |
Part Name |
Description |
Manufacturer |
| 10921 |
2N5087 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE |
Continental Device India Limited |
| 10922 |
2N5087 |
Low Noise PNP Transistor |
FERRANTI |
| 10923 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 10924 |
2N5087 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 10925 |
2N5087 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 10926 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 10927 |
2N5087 |
Silicon PNP Transistor |
Motorola |
| 10928 |
2N5087 |
PNP Transistor - Low level AMPS |
National Semiconductor |
| 10929 |
2N5087 |
PNP general purpose transistor |
Philips |
| 10930 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 10931 |
2N5087-D |
Amplifier Transistor PNP Silicon |
ON Semiconductor |
| 10932 |
2N5088 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 10933 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
| 10934 |
2N5088 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 10935 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 10936 |
2N5088 |
Silicon NPN Transistor |
Motorola |
| 10937 |
2N5088 |
NPN Transistor - Low level AMPS |
National Semiconductor |
| 10938 |
2N5088 |
NPN general purpose transistor |
Philips |
| 10939 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 10940 |
2N5088-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 10941 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 10942 |
2N5089 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 10943 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 10944 |
2N5089 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 10945 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 10946 |
2N5089 |
Silicon NPN Transistor |
Motorola |
| 10947 |
2N5089 |
NPN Transistor - Low level AMPS |
National Semiconductor |
| 10948 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 10949 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 10950 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
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