| No. |
Part Name |
Description |
Manufacturer |
| 10951 |
MOC8113S |
6-Pin DIP Phototransistor Output Optocoupler- No Base Connection |
Fairchild Semiconductor |
| 10952 |
MOC8113SD |
6-Pin DIP Phototransistor Output Optocoupler- No Base Connection |
Fairchild Semiconductor |
| 10953 |
MOC8113W |
6-Pin DIP Phototransistor Output Optocoupler- No Base Connection |
Fairchild Semiconductor |
| 10954 |
MPC2002 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems |
Motorola |
| 10955 |
MPC2002SG50 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems |
Motorola |
| 10956 |
MPC2002SG60 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems |
Motorola |
| 10957 |
MPC2002SG66 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems |
Motorola |
| 10958 |
MPC2003SG50 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems |
Motorola |
| 10959 |
MPC2003SG60 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems |
Motorola |
| 10960 |
MPC2003SG66 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems |
Motorola |
| 10961 |
MR18R1622(4/8/G)AF0 |
(16Mx16)*2(4/8/16)pcs RIMM� Module based on 256Mb A-die Data Sheet |
Samsung Electronic |
| 10962 |
MR18R1624(6,8)MN1 |
(16Mx16)*4(6/8)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect |
Samsung Electronic |
| 10963 |
MR18R1624(6,8)MN1 |
(16Mx16)*4(6/8)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet |
Samsung Electronic |
| 10964 |
MR18R162C(G)MN0 |
(16Mx16)*12(16)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect |
Samsung Electronic |
| 10965 |
MR18R162C(G)MN0 |
(16Mx16)*12(16)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet |
Samsung Electronic |
| 10966 |
MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 10967 |
MR18R326GAG0-CM8 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 10968 |
MR18R326GAG0-CT9 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 10969 |
MRAL1417 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base |
TRW |
| 10970 |
MRAL1417-11 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 11W |
TRW |
| 10971 |
MRAL1417-2 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 2W |
TRW |
| 10972 |
MRAL1417-25 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 25W |
TRW |
| 10973 |
MRAL1417-6 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 6W |
TRW |
| 10974 |
MRAL1720 |
Internally Compensated, gold metalized, 22V operation, 1700-2000MHz, common base |
TRW |
| 10975 |
MRAL1720-2 |
Internally Compensated, gold metalized, 22V operation, 1700-2000MHz, common base, 2W |
TRW |
| 10976 |
MRAL1720-20 |
Internally Compensated, gold metalized, 22V operation, 1700-2000MHz, common base, 20W |
TRW |
| 10977 |
MRAL1720-5 |
Internally Compensated, gold metalized, 22V operation, 1700-2000MHz, common base, 5W |
TRW |
| 10978 |
MRAL1720-9 |
Internally Compensated, gold metalized, 22V operation, 1700-2000MHz, common base, 9W |
TRW |
| 10979 |
MS1578 |
RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION |
Microsemi |
| 10980 |
MSC3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
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